MUR420 document number 88685 21-jul-05 vishay general semiconductor www.vishay.com 1 do-201ad ultrafast plastic rectifier major ratings and characteristics i f(av) 4.0 a v rrm 200 v i fsm 150 a t rr 25 ns v f 0.710 v t j max. 175 c features glass passivated chip junction ultrafast reverse recovery time low forward voltage drop low leakage current low switching losse s, high efficiency high forward surge capability solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer and telecommuni- cation mechanical data case: do-201ad epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol value unit maximum repetitive peak reverse voltage v rrm 200 v working peak reverse voltage v rwm 200 v maximum dc blocking voltage v dc 200 v maximum average forward rectified current at t a = 80 c (see figure 1) i f(av) 4.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88685 21-jul-05 MUR420 vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: t p = 300 s, duty cycle 2 % thermal characteristics t a = 25 c unless otherwise specified notes: (1) lead length = 1/2" on p.c. board with 1/2" x 1/2" copper surface ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol value unit maximum instantaneous forward voltage (1) at 3.0 a, t j = 150 c at 3.0 a, t j = 25 c at 4.0 a, t j = 25 c v f 0.710 0.875 0.890 v maximum instantaneous reverse current at rated dc blocking voltage (1) t j = 25 c t j = 150 c i r 5.0 150 a maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 25 ns maximum reverse recovery time at i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t rr 35 ns maximum forward recovery time i f = 1.0 a, di/dt = 100 a/s, rec. to 1.0 v t fr 25 ns parameter symbol value unit typical thermal resistance junction to ambient (1) r ja 28 c/w figure 1. forward current derating curve 0 2.0 4.0 6.0 8.0 average forward current (a) ambient temperature (c) 0 25 50 75 100 125 150 175 figure 2. maximum non-repetitive peak forward surge current 0 50 75 100 125 150 25 1 100 10 peak forward surge current (a) number of cycles at 60 h z
MUR420 document number 88685 21-jul-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.4 0.2 0.6 0.8 1.0 1.2 1.4 instantaneous forward voltage (v) 0.01 0.1 10 100 1 instantaneous forward current (a) t j = 175 c t j =25c t j = 100 c 020 60 40 100 80 instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) 0.001 0.01 0.1 1 10 100 1000 t j = 175 c t j = 100 c t j =25c figure 5. typical junction capacitance reverse voltage (v) junction capacitance (pf) 1 0.1 10 100 1000 10 100 1 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad
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